1. product profile 1.1 general description 500 ma npn resistor-equipped transistors (ret) family. [1] also available in sot54a and sot54 variant packages (see section 2 ). 1.2 features 1.3 applications 1.4 quick reference data PDTD113E series npn 500 ma, 50 v resistor-equipped transistors; r1 = 1 k , r2 = 1 k rev. 02 ? 16 november 2009 product data sheet table 1. product overview type number package pnp complement nxp jeita jedec PDTD113Ek sot346 sc-59a to-236 pdtb113ek PDTD113Es [1] sot54 sc-43a to-92 pdtb113es PDTD113Et sot23 - to-236ab pdtb113et ? built-in bias resistors ? reduces component count ? simplifies circuit design ? reduces pick and place costs ? 500 ma output cu rrent capability ? 10 % resistor ratio tolerance ? digital application in automotive and industrial segments ? cost saving alternative for bc817 series in digital applications ? controlling ic inputs ? switching loads table 2. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 50 v i o output current (dc) - - 500 ma r1 bias resistor 1 (input) 0.7 1 1.3 k r2/r1 bias resistor ratio 0.9 1.0 1.1
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 2 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 2. pinning information table 3. pinning pin description simplified outline symbol sot54 1 input (base) 2 output (collector) 3 gnd (emitter) sot54a 1 input (base) 2 output (collector) 3 gnd (emitter) sot54 variant 1 input (base) 2 output (collector) 3 gnd (emitter) sot23, sot346 1 input (base) 2 gnd (emitter) 3 output (collector) 001aab34 7 1 2 3 006aaa145 2 3 1 r1 r2 001aab34 8 1 2 3 006aaa145 2 3 1 r1 r2 001aab44 7 1 2 3 006aaa145 2 3 1 r1 r2 006aaa14 4 12 3 sym007 3 2 1 r1 r2
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 3 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 3. ordering information [1] also available in sot54a and sot54 variant packages (see section 2 and section 9 ). 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 4. ordering information type number package name description version PDTD113Ek sc-59a plastic surface mounted package; 3 leads sot346 PDTD113Es [1] sc-43a plastic single-ended leaded (through hole) package; 3 leads sot54 PDTD113Et - plastic surface mounted package; 3 leads sot23 table 5. marking codes type number marking code [1] PDTD113Ek e1 PDTD113Es d113es PDTD113Et *7r table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +10 v negative - ? 10 v i o output current (dc) - 500 ma p tot total power dissipation t amb 25 c [1] sot346 - 250 mw sot54 - 500 mw sot23 - 250 mw t stg storage temperature ? 65 +150 c t j junction temperature - 150 c t amb ambient temperature ? 65 +150 c
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 4 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. 7. characteristics table 7. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] sot346 - - 500 k/w sot54 - - 250 k/w sot23 - - 500 k/w table 8. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =40v; i e = 0 a - - 100 na v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =50v; i b =0a - - 0.5 a i ebo emitter-base cut-off current v eb =5v; i c =0a - - 4 ma h fe dc current gain v ce =5v; i c =50ma 33 - - v cesat collector-emitter saturation voltage i c =50ma; i b =2.5ma - - 0.3 v v i(off) off-state input voltage v ce =5v; i c = 100 a 0.6 1.1 1.5 v v i(on) on-state input voltage v ce =0.3v; i c = 20 ma 1.0 1.4 1.8 v r1 bias resistor 1 (input) 0.7 1 1.3 k r2/r1 bias resistor ratio 0.9 1 1.1 c c collector capacitance v cb =10v; i e =i e =0a; f=100mhz -7-pf
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 5 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k v ce = 5 v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 40 c i c /i b = 20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 40 c fig 1. dc current gain as a function of collector current; typical values fig 2. collector-emitter saturation voltage as a function of collector current; typical values v ce = 0.3 v (1) t amb = ? 40 c (2) t amb = 25 c (3) t amb = 100 c v ce = 5 v (1) t amb = ? 40 c (2) t amb = 25 c (3) t amb = 100 c fig 3. on-state input voltage as a function of collector current; typical values fig 4. off-state input volt age as a function of collector current; typical values 006aaa310 10 1 10 2 10 3 h fe 10 ? 1 i c (ma) 10 ? 1 10 3 10 2 110 (1) (2) (3) 006aaa311 i c (ma) 10 10 3 10 2 10 ? 1 v cesat (v) 10 ? 2 (1) (2) (3) 006aaa312 i c (ma) 10 ? 1 10 3 10 2 110 1 10 v i(on) (v) 10 ? 1 (1) (2) (3) i c (ma) 10 ? 1 10 1 006aaa313 1 10 v i(off) (v) 10 ? 1 (1) (2) (3)
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 6 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 8. package outline fig 5. package outline sot346 (sc-59a/to-236) fig 6. package outline sot54 (sc-43a/to-92) fig 7. package outline sot54a fig 8. package outline sot54 variant fig 9. package outline sot23 (to-236ab) 04-11-11 dimensions in mm 3.0 2.5 1.7 1.3 0.26 0.10 12 3 1.9 0.50 0.35 1.3 1.0 3.1 2.7 0.6 0.2 04-11-16 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 2.54 3 2 1 04-06-28 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 2.54 5.08 3 max 3 2 1 05-01-10 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 1.27 2.54 2.5 max 3 2 1 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 7 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 9. packing information [1] for further information and the avai lability of packing methods, see section 12 . table 9. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 5000 10000 PDTD113Ek sot346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTD113Es sot54 bulk, straight leads - -412 - sot54a tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 sot54 variant bulk, delta pinning - -112 - PDTD113Et sot23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 8 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 10. revision history table 10. revision history document id release date data sheet status change notice supersedes PDTD113E_ser_2 20091116 product data sheet - PDTD113E_ser_1 modifications: ? this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content. PDTD113E_ser_1 20050414 product data sheet - -
PDTD113E_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 16 november 2009 9 of 10 nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors PDTD113E series npn 500 ma resistor-equipped transistors; r1 = 1 k , r2 = 1 k ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 16 november 2009 document identifier: PDTD113E_ser_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 packing information . . . . . . . . . . . . . . . . . . . . . 7 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 contact information. . . . . . . . . . . . . . . . . . . . . . 9 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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